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 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398
Transistors
Power Transistor (100V , 2A)
2SD2195 / 2SD1980 / 2SD1867 / 2SD2398
!Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1580 / 2SB1316 / 2SB1567. !External dimensions (Units : mm)
2SD2195
1.0
1.5 0.4
4.0 2.5 0.5
(1)
3.0
0.5
(3)
4.5
1.6
(2)
(1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)
1.5 0.4
!Absolute maximum ratings (Ta = 25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 2SD2195 Collector power dissipation 2SD1980 2SD1867 2SD2398 Junction temperature
Storage temperature
ROHM : MPT3 EIAJ : SC-62
Unit V V V A(DC) A(Pulse) 1 W 2 W(Tc=25C) W 3
1.0 0.5
Symbol VCBO VCEO VEBO IC
(3) (2) (1)
2.3
Limits 100 100 6 2 3 2 1 10 1 2 20 150
-55 +150
2SD1980
0.75
0.4
5.5
1.5
0.9
0.9
0.65 2.3
PC
5.1 6.5
C0.5
1.5
0.5
1.5 2.5 9.5
Tj
Tstg
C C
1 Single pulse Pw=100ms 2 When mounted on a 40 x 40 x 0.7 mm ceramic board. 3 Printed circuit board, 1.7mm thick, collector plating 100mm2 or larger.
ROHM : CPT3 EIAJ : SC-63
2SD1867
2.3
W(Tc=25C)
0.8Min.
(1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)
6.8
2.5
!Packaging specifications and hFE
Type Package hFE Marking Code Basic ordering unit (pieces)
Denotes hFE
2SD2195 2SD1980 2SD1867 2SD2398 MPT3 CPT3 ATV TO-220FN 1k 10k 1k 10k 1k 10k 1k 10k DP - - - T100 TL TV2 - 1000 2500 2500 500
0.65Max.
1.0
0.9
0.5 (1) (2) (3) 2.54 2.54
14.5
4.4
ROHM : ATV
1.05
0.45
Taping specifications
(1) Emitter (2) Collector (3) Base
!Circuit schematic
C
2SD2398
10.0
4.5
3.2
2.8
15.0 12.0
8.0 5.0
14.0
B
1.2
1.3 0.8
R1 R1 3.5k R2 300
R2 E B : Base C : Collector E : Emitter
2.54
2.54
(1) (2) (3) (1) (2) (3)
0.75
2.6
(1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)
ROHM : TO-220FN
!Electrical characteristics (Ta = 25C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance
Measured using pulse current.
Symbol BVCBO BVCEO ICBO IEBO VCE(sat) hFE Cob
Min. 100 100 - - - 1000 -
Typ. - - - - - - 25
Max. - - 10 3 1.5 10000 -
Unit V V A mA V - pF
Conditions IC = 50A IC = 5mA VCB = 100V VEB = 5V IC = 1A , IB = 1mA VCE = 2V , IC = 1A VCB = 10V , IE = 0A , f = 1MHz


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